Effects of the dissolved oxygen in Ti films on Ti reactions in Cu/Ti/SiO2/Si system upon annealing-Reference-Cited by-同舟云学术

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Effects of the dissolved oxygen in Ti films on Ti reactions in Cu/Ti/SiO2/Si system upon annealing

Published:2004-09-30 Issue:11 Volume:19 Page:1315-1321
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hong S J,Lee S,Yang H J,Lee H M,Ko Y K,Hong H N,Soh H S,Kim C K,Yoon C S,Ban K S,Lee J G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Double-level copper interconnections using selective copper CVD

2. Selective and blanket copper chemical vapor deposition for ultra-large-scale integration

3. Copper Chemical Vapor Deposition Films Deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane

4. Copper metallization for ULSL and beyond

5. Simulations of stress evolution and the current density scaling of electromigration-induced failure times in pure and alloyed interconnects

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1. Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading;Materials;2023-01-03

2. Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes;Journal of Electronic Materials;2022-03-02

3. Effects of Copper Migration on the Reliability of Through-Silicon Via (TSV);IEEE Transactions on Device and Materials Reliability;2018-12

4. Reliability Evaluation of Copper (Cu) Through-Silicon Vias (TSV) Barrier and Dielectric Liner by Electrical Characterization and Physical Failure Analysis (PFA);2017 IEEE 67th Electronic Components and Technology Conference (ECTC);2017-05

5. Multifractal analysis for Cu/Ti bilayer thin films;Surface and Interface Analysis;2013-03-11

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