Radiative recombination in doped AlGaAs/GaAs heterostructures-Reference-Cited by-同舟云学术

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Radiative recombination in doped AlGaAs/GaAs heterostructures

Published:1990-08-01 Issue:8 Volume:5 Page:884-889
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhao Q X,Berman J P,Holtz P O,Monemar B,Hallin C,Sundaram M,Merz J L,Gossard A C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=8/a=014/pdf

Reference17 articles.

1. New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface

2. Radiative recombination of a 3D-electron with a 2D-hole in p-type GaAs/(GaAl)As heterojunctions

3. Near‐band‐gap luminescence from a GaAs‐AlGaAs interface

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effective radiative recombination coefficient of p-AlGaAs for varying aluminium concentrations;Journal of Crystal Growth;2023-03

2. Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure;Microelectronics Journal;2023-01

3. Effect of Carrier Confinement and Optical Properties of Two-dimensional Electrons in Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/GaN/Al0.15Ga0.85N/GaN Heterostructures;Journal of the Korean Vacuum Society;2008-07-30

4. Charge and spin dynamics in a two-dimensional electron gas;Journal of Physics: Condensed Matter;2007-06-11

5. Current-induced spatial patterns of photoluminescence inAlxGa1−xAs/GaAsheterojunctions at quantizing magnetic fields;Physical Review B;2001-09-28

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