Anharmonic vibrations of hydrogen paired with shallow impurities in semiconductors-Reference-Cited by-同舟云学术

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Anharmonic vibrations of hydrogen paired with shallow impurities in semiconductors

Published:1990-08-01 Issue:8 Volume:5 Page:911-913
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Newman R C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=8/a=019/pdf

Reference16 articles.

1. Hydrogen in crystalline semiconductors

2. Infrared spectroscopic evidence of silicon related hydrogen complexes in hydrogenatedn‐type GaAs doped with silicon

3. High-resolution infrared study of the neutralization of silicon donors in gallium arsenide

4. Sn-H Complex in Hydrogen Pass Ivated GaAs

5. Spectroscopic evidence for the hydrogen passivation of zinc acceptors in gallium arsenide

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Force constant change upon isotopic substitution of hydrogen for deuterium;Physical Review B;2001-01-26

2. Local vibrational modes of impurities in semiconductors;Journal of Applied Physics;2000-04-15

3. Microscopic properties of H2 in Si from the dependence of the 3618.4cm−1 line on temperature and stress;Physica B: Condensed Matter;1999-12

4. Symmetry of MolecularH2in Si from a Uniaxial Stress Study of the3618.4cm−1Vibrational Line;Physical Review Letters;1999-08-16

5. Hydrogen in III-V and II-VI Semiconductors;Semiconductors and Semimetals;1999

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