Sn-H Complex in Hydrogen Pass Ivated GaAs-Reference-Cited by-同舟云学术

Sn-H Complex in Hydrogen Pass Ivated GaAs

Published:1989 Issue: Volume:163 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kozuch D. M.,Stavola Michael,Pearton S. J.,Abernathy C. R.,Lopata J.

Abstract

AbstractIt is confirmed that Sn donors in GaAs are passivated by exposure to a hydrogen plasma. The Sn-H complexes give rise to vibrational absorption bands at 1327.8 cm-1 and 967.7 cm-1 that are assigned to H-stretching and H-wagging modes respectively. A study of the thermal stability of the Sn-H complexes shows that they dissociate for annealing temperatures above ~150°C. The properties of the Sn-H complexes are compared to those of other donor-H complexes. Our results suggest a configuration for the complex with H at the antibonding site adjacent to the Sn.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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