Hydrogen in III-V and II-VI Semiconductors
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Publisher
Elsevier
Reference125 articles.
1. Excitation Spectra of Donors in Aluminum Antimonide
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Large photoinduced persistent optical absorption in selenium doped AlSb
4. Proceedings of the 7th International Conference on InP and Related Materials.;Bliss,1995
5. Shallow-Level Centers in Semiconductors;Bouanani-Rahbi,1997
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