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Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma

  • Published:1999-01-01 Issue:7 Volume:14 Page:611-614
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Mamor M,Auret F D,Willander M,Goodman S A,Myburg G,Meyer F

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Barrier inhomogeneities in titanium Schottky contacts formed on argon plasma etched p-type Si0.95Ge0.05;Journal of Materials Science: Materials in Electronics;2014-02-01

2. Smooth Bosch Etch for Improved Si Diodes;IEEE Electron Device Letters;2013-10

3. Defect production in strained p-type Si1−xGex by Er implantation;Journal of Applied Physics;2011-01

4. Sidewall damage in plasma etching of Si/SiGe heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-07

5. Characterization of plasma etching induced interface states at Ti∕p-SiGe Schottky contacts;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-07
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