Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC-Reference-Cited by-同舟云学术

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Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

Published:2009-04-03 Issue:5 Volume:24 Page:055006
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Nikitina I,Vassilevski K,Horsfall A,Wright N,O'Neill A G,Ray S K,Zekentes K,Johnson C M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. SiC power Schottky and PiN diodes

2. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

3. Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications;Microelectronic Engineering;2022-02

2. Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes;IEEE Transactions on Industry Applications;2021-09

3. Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes;Semiconductor Science and Technology;2020-09-29

4. Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior;Journal of Applied Physics;2017-08-28

5. Dose Rate Linearity in 4H-SiC Schottky Diode-Based Detectors at Elevated Temperatures;IEEE Transactions on Nuclear Science;2017-07

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