P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Published:2003-11-21 Issue:3 Volume:19 Page:L13-L16
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Novikov S V,Edmonds K W,Giddings A D,Wang K Y,Staddon C R,Campion R P,Gallagher B L,Foxon C T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Toward Functional Spintronics

3. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

4. Carrier-mediated ferromagnetic ordering in Mn ion-implantedp+GaAs:C

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1. Enhancement of light emission in GaAs epilayers with graphene quantum dots;RSC Advances;2015

2. InGaN Technology for IBSC Applications;Springer Series in Optical Sciences;2012

3. A theoretical study of band structure properties for III–V nitrides quantum wells;Superlattices and Microstructures;2011-10

4. Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy;Semiconductor Science and Technology;2009-10-27

5. Mn clusterisation in;Solid State Communications;2009-09

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