Enhancement of light emission in GaAs epilayers with graphene quantum dots-Reference-Cited by-同舟云学术

Enhancement of light emission in GaAs epilayers with graphene quantum dots

Published:2015 Issue:75 Volume:5 Page:60908-60913
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lin T. N.¹²³⁴,Chih K. H.⁵²⁶⁴,Cheng M. C.¹²³⁴,Yuan C. T.¹²³⁴,Hsu C. L.¹²³⁴,Shen J. L.¹²³⁴,Hou J. L.⁷⁸⁴,Wu C. H.⁷⁸⁴,Chou W. C.⁹¹⁰¹¹⁴,Lin T. Y.¹²¹³¹⁴⁴

Affiliation:

1. Department of Physics and Center for Nanotechnology

2. Chung Yuan Christian University

3. Chung-Li 32023

4. Taiwan

5. Master Program in Nanotechnology at CYCU

6. Chung-Li

7. Institute of Nuclear Energy Research

8. Lung-Tan 32500

9. Electrophysics Department

10. National Chiao-Tung University

11. Hsin-Chu

12. Institute of Optoelectronic Sciences

13. National Taiwan Ocean University

14. Keelung

Abstract

The effect of graphene quantum dots (GQDs) on the enhancement of PL in GaAs epilayers has been demonstrated and interpreted by carrier transfer due to the work function difference.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA09315E

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5. The rise of graphene

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