Retention in metal–oxide–semiconductor structures with two embedded self-aligned Ge-nanocrystal layers-Reference-Cited by-同舟云学术

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Retention in metal–oxide–semiconductor structures with two embedded self-aligned Ge-nanocrystal layers

Published:2007-06-29 Issue:8 Volume:22 Page:837-842
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Duguay S,Burignat S,Kern P,Grob J J,Souifi A,Slaoui A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. A silicon nanocrystals based memory

2. Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates

3. Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

4. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

5. Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications

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3. Investigation of electrical and compositional properties of SiO2/Au/SiO2 for nonvolatile memory application;Applied Physics A;2018-07-19

4. Synthesis and Characterization of Nanocrystals and Nanoparticles;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17

5. Dielectric engineering of Ge nanocrystal/SiO2 nanocomposite thin films with Ge ion implantation: Modeling and measurement;Materials & Design;2015-10

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