Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films-Reference-Cited by-同舟云学术

Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

Published:2001-05 Issue:1-4 Volume:178 Page:74-77
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Normand P,Beltsios K,Kapetanakis E,Tsoukalas D,Travlos T,Stoemenos J,Van Den Berg J,Zhang S,Vieu C,Launois H,Gautier J,Jourdan F,Palun L

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Formation of 2-D Arrays of Silicon Nanocrystals in Thin SiO[sub 2] Films by Very-Low Energy Si[sup +] Ion Implantation

2. Structure Formation Phenomena During Phase Inversion. II. Semiflexible Polymers and Liquid Crystallinity

3. The formation of narrow nanocluster bands in Ge-implanted SiO2-layers

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