Monte Carlo simulation of InP and GaAs MESFETs-Reference-Cited by-同舟云学术

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Monte Carlo simulation of InP and GaAs MESFETs

Published:1994-11-02 Issue:11 Volume:9 Page:2123-2129
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Dunn G M,Walker A B,Jefferson J H,Herbert D C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=11/a=015/pdf

Reference22 articles.

1. Computer simulation of negative-resistance oscillators using a Monte-Carlo model of gallium arsenide

2. Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulation

3. Current transport in narrow-base transistors

4. Quasi-ballistic corrections to base transit time in bipolar transistors

5. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes;Semiconductor Science and Technology;2003-07-02

2. Complete Monte Carlo RF analysis of "real" short-channel compound FET's;IEEE Transactions on Electron Devices;1998

3. Monte Carlo simulation of 94 GHz InP Gunn diodes;ICMMT'98. 1998 International Conference on Microwave and Millimeter Wave Technology. Proceedings (Cat. No.98EX106)

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