A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz
2. D-band (110–170 GHz) InP gunn devices
3. High-performance InP Gunn devices for fundamental-mode operation in D-band (110-170 GHz)
4. Efficient power combining with D-band (110-170 GHz) InP Gunn devices in fundamental-mode operation
5. D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz
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