Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers-Reference-Cited by-同舟云学术

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Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

Published:2016-08-25 Issue:9 Volume:31 Page:095009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Rigutti L,Mancini L,Lefebvre W,Houard J,Hernàndez-Maldonado D,Di Russo E,Giraud E,Butté R,Carlin J-F,Grandjean N,Blavette D,Vurpillot F

Funder

Agence Nationale de la Recherche

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=9/a=095009/pdf

Reference46 articles.

1. Recombination Enhancement due to Carrier Localization in Quantum Well Structures

2. On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

3. Localization of excitons by potential fluctuations and its effect on the Stokes shift in InGaP/InP quantum confined heterostructures

4. Optical investigations of AlGaN on GaN epitaxial films

5. Exciton localization in AlGaN alloys

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1. Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode;IEEE Photonics Journal;2024-02

2. Basics of simulations and carrier localization effects in semiconductor materials;Encyclopedia of Condensed Matter Physics;2024

3. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission;Nanotechnology;2023-04-21

4. Exciton Effects in Low-Barrier GaN/AlGaN Quantum Wells;The Journal of Physical Chemistry C;2022-08-23

5. Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy;Physical Review Applied;2022-04-15

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