Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes-Reference-Cited by-同舟云学术

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Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes

Published:2006-06-28 Issue:8 Volume:21 Page:1047-1052
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ulloa J M,Hierro A,Miguel-Sánchez J,Guzmán A,Chauveau J M,Trampert A,Tournié E,Calleja E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m

2. Growth of high quality InGaAsN heterostructures and their laser application

3. Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

4. A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

5. High T/sub 0/ long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the influence of variable temperature growth on the properties of highly strained InGaAs/GaAs MQWs grown by MOCVD;Journal of Alloys and Compounds;2023-03

2. Carrier localization effects in GaAs1−xSbx/GaAs heterostructures;Journal of Applied Physics;2016-11-11

3. Theoretical Study on Dilute Nitride 1.3 $\mu{\rm m}$ Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations;IEEE Journal of Quantum Electronics;2013-10

4. 1.3μm emitting GaInNAs/GaAs quantum well resonant cavity LEDs;Solid-State Electronics;2010-04

5. Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy;Journal of Applied Physics;2007-05-15

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