On chemical vapour deposition of Si1-(x+y)GexBythin films with very high or very low boron contents. 2. Very high boron contents and amorphous state
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=10/a=014/pdf
Reference7 articles.
1. On the chemical vapour deposition of Si1-(x+y)GexBythin films with very high or very low boron contents: Part 1. The binary systems
2. On a substituting, sticking and trapping model of CVD Si1−xGex layer growth
3. Correlation among Si, Ge, and B deposition rates in low-pressure CVD with SiH4−GeH4−B2H6-He mixtures
4. On the thermodynamics of granular media
5. Kinetics of silicon‐germanium deposition by atmospheric‐pressure chemical vapor deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of boron-doping on the growth rate of atmospheric pressure chemical vapour deposition of Si;Journal of Crystal Growth;1997-12
2. On chemical vapour deposition of Si1-(x+y)GexBythin films with very high and very low boron contents. III. Very low boron contents and the epitaxial state;Semiconductor Science and Technology;1995-06-01
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