On a substituting, sticking and trapping model of CVD Si1−xGex layer growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Low‐temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure
2. Kinetics of silicon‐germanium deposition by atmospheric‐pressure chemical vapor deposition
3. A First Approach to CVD Si1–xGex Layer Growth by Means of Chemical Reaction Kinetics
4. Germanium. XIII
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