Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species-Reference-Cited by-同舟云学术

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Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species

Published:2016-07-21 Issue:8 Volume:31 Page:084004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Douglas J O,Bagot P A J,Johnson B C,Jamieson D N,Moody M P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=8/a=084004/pdf

Reference47 articles.

1. Atom probe specimen fabrication methods using a dual FIB/SEM

2. 3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography

3. Single dopants in semiconductors

4. High-resolution secondary ion mass spectrometry depth profiling of nanolayers

5. Evaluation of possible mechanisms behind P gettering of iron

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1. The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography;Ultramicroscopy;2024-12

2. Caesium and strontium contamination on NAG 18/10L stainless steel following corrosion in simulated nitric acid reprocessing liquor;Corrosion Science;2024-11

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4. Caesium and Strontium Contamination on Nag 18/10l Stainless Steel Following Corrosion in Simulated Nitric Acid Reprocessing Liquor;2024

5. Atom Probe Tomography of Au–Cu Bimetallic Nanoparticles Synthesized by Inert Gas Condensation;The Journal of Physical Chemistry C;2019-10-04

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