Spectroscopy of sub-wetting layer states in InAs/GaAs quantum dot bi-layer systems-Reference-Cited by-同舟云学术

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Spectroscopy of sub-wetting layer states in InAs/GaAs quantum dot bi-layer systems

Published:2006-12-19 Issue:2 Volume:22 Page:86-96
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mazur Yu I,Wang Zh M,Kissel H,Zhuchenko Z Ya,Lisitsa M P,Tarasov G G,Salamo G J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Low threshold, large To injection laser emission from (InGa)As quantum dots

2. Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)

3. Critical layer thickness for self-assembled InAs islands on GaAs

4. Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields

5. In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001)

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1. Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers;Microelectronic Engineering;2022-07

2. Вплив термічної активації носіїв заряду на температурні залежності темнового струму, фотопровідність та фотолюмінесценцію гетероструктур In0,4Ga0,6As/GaAs з квантовими точками;Ukrainian Journal of Physics;2022-02-14

3. 10.15407/ujpe56.4;Ukrainian Journal of Physics;2022-02-14

4. Experimental and theoretical study of thermally activated carrier transfer in InAs/GaAs multilayer quantum dots;Applied Physics A;2020-06-05

5. Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures;Journal of Applied Physics;2016-05-14

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