SOI nanowires as sensors for charge detection-Reference-Cited by-同舟云学术

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SOI nanowires as sensors for charge detection

Published:2010-04-06 Issue:5 Volume:25 Page:055004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Naumova O V,Fomin B I,Nasimov D A,Dudchenko N V,Devyatova S F,Zhanaev E D,Popov V P,Latyshev A V,Aseev A L,Ivanov Yu D,Archakov A I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Frontiers of silicon-on-insulator

2. Multiple-gate SOI MOSFETs: device design guidelines

3. Silicon single-electron quantum-dot transistor switch operating at room temperature

4. Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration

5. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

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