Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration-Reference-Cited by-同舟云学术

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Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration

Published:2001-06-15 Issue:12 Volume:89 Page:8159-8162
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tilke A.,Blick R. H.,Lorenz H.,Kotthaus J. P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1368399

Reference13 articles.

1. Observation of quantum effects and Coulomb blockade in silicon quantum‐dot transistors at temperatures over 100 K

2. Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

3. Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire

4. Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate

5. Coulomb blockade in quasimetallic silicon-on-insulator nanowires

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