High-performance ZnO thin-film transistor fabricated by atomic layer deposition-Reference-Cited by-同舟云学术

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High-performance ZnO thin-film transistor fabricated by atomic layer deposition

Published:2011-05-03 Issue:8 Volume:26 Page:085007
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Oh Byeong-Yun,Kim Young-Hwan,Lee Hee-Jun,Kim Byoung-Yong,Park Hong-Gyu,Han Jin-Woo,Heo Gi-Seok,Kim Tae-Won,Kim Kwang-Young,Seo Dae-Shik

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition

3. Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape

4. Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

5. Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition

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