Investigation of Ti/Au and Ti2N/Ti/Au ohmic contacts to n-GaN films
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. A review of III-nitride research at the Center for Quantum Devices
2. A Review on the Reliability of GaN-Based LEDs
3. Metal contacts to n-GaN
4. Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN
5. Ohmic contacts to n-type GaN
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface analysis of TiN/n-GaN Ohmic contacts with high thermal stability;Applied Surface Science;2019-07
2. Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity;Journal of Vacuum Science & Technology A;2018-07
3. Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes;IEEE Photonics Journal;2017-12
4. Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN;Applied Sciences;2016-02-22
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