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Chemical preparation of GaSb(001) substrates prior to MBE

  • Published:1989-07-01 Issue:7 Volume:4 Page:565-569
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Silva F W O Da,Raisin C,Silga M,Nouaoura M,Lassabatere L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Universal Deoxidation of Semiconductor Substrates Assisted by Machine Learning and Real-Time Feedback Control;ACS Applied Materials & Interfaces;2024-03-30

2. In situ flashes of gallium technique for oxide-free epiready GaSb (100) surface;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03

3. Epitaxial growth of ZnTe on GaSb(100) using in situ ZnCl2 surface clean;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05

4. In-situ monitoring and analysis of GaSb(100) substrate deoxidation;Applied Surface Science;2005-04

5. Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy;Journal of Crystal Growth;2004-12
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