Plasma ash modulation of TDDB thermal activation energy in damascene SiOC:H-Reference-Cited by-同舟云学术

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Plasma ash modulation of TDDB thermal activation energy in damascene SiOC:H

Published:2007-02-23 Issue:4 Volume:22 Page:320-325
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Li Yunlong,Tokei Zsolt,Aelst Joke Van,Carbonell Laureen,Baklanov Mikhaïl R,Richard Olivier,Bender Hugo,Groeseneken Guido,Maex Karen

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Low dielectric constant materials for microelectronics

2. Electrical Equivalent Sidewall Damage in Patterned Low-k Dielectrics

3. Role of dielectric and barrier integrity in reliability of sub-100 nm copper low-k interconnects

4. Thermal desorption from metal surfaces: A review

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics;Applied Physics Letters;2016-09-19

2. Mechanical properties of a plasma-modified porous low-k material;Microelectronic Engineering;2010-03

3. Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery";Solid State Phenomena;2009-01

4. Passivation Effect during the C4F8 + N2 Etch Process for SiOCH Low-k Films;Journal of the Korean Physical Society;2008-06-14

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