Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"-Reference-Cited by-同舟云学术

Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"

Published:2009-01 Issue: Volume:145-146 Page:295-302
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Broussous Lucile¹,Puyrenier W.¹,Rebiscoul D.²,Rouessac V.³,Ayral A.³

Affiliation:

1. STMicroelectronics

2. LETI-CEA Grenoble (Technologies Avancées)

3. CNRS/ENSCM/Université Montpellier II

Abstract

In this study, the compatibility of "HF-Based" cleaning with porous low-k integration, and “pore-sealing” approach was investigated, and specific attention was paid to ultra low-k porosity evolution. We also tried to demonstrate if "k-recovery" could be achieved by thinning the modified surface layer in the pattern trench walls (plasma damaged layer), for 65nm and 45 nm design rules.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.145-146.295.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet Chemical Processes for BEOL Technology;Springer Handbook of Semiconductor Devices;2022-11-11

2. BEOL Post-Etch Clean Robustness Improvement with Ultra-Diluted Hf for 28nm Node;Solid State Phenomena;2018-08

3. Oxygen Control for Wet Clean Process on Single Wafer Platform;Solid State Phenomena;2016-09

4. Impact of HF-based cleaning solutions on via resistance for sub-10 nm BEOL structures;Microelectronic Engineering;2016-08

5. Chemistry in Interconnects;Chemistry in Microelectronics;2013-03-14