The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics-Reference-Cited by-同舟云学术

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The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics

Published:2016-09-19 Issue:12 Volume:109 Page:122905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pei D.¹,Xue P.¹^ORCID,Li W.¹^ORCID,Guo X.¹,Lin Y. H.²,Fung H. S.²,Chen C. C.²,Nishi Y.³^ORCID,Shohet J. L.¹^ORCID

Affiliation:

1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

3. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

Funder

National Science Foundaton

Semiconductor Research Corporation`

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962949

Reference33 articles.

1. Low dielectric constant materials for microelectronics

2. Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art

3. Low Dielectric Constant Sicoh Films As Potential Candidates for Interconnect Dielectrics

4. Low-kSi–O–C–H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor

5. Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low- k polymer interlayer dielectrics

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