Effect of Schottky gate type and channel defects on the stability of transparent ZnO MESFETs-Reference-Cited by-同舟云学术

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Effect of Schottky gate type and channel defects on the stability of transparent ZnO MESFETs

Published:2015-01-19 Issue:2 Volume:30 Page:024008
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Elzwawi S,Hyland A,Lynam M,Partridge J G,McCulloch D G,Allen M W

Funder

MacDiarmid Institute for Advanced Materials and Nanotechnology

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=2/a=024008/pdf

Reference29 articles.

1. Performance of thin hydrogenated amorphous silicon thin‐film transistors

2. The physics of amorphous-silicon thin-film transistors

3. Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress

4. Transparent semiconducting oxides: materials and devices

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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1. Performance of metal-semiconductor field effect transistors on mist chemical-vapor-deposition grown ZnO channels with intentionally oxidized AgOx Schottky contact gates;Journal of Applied Physics;2021-11-07

2. A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors;Applied Physics Letters;2020-11-16

3. Schottky barrier diodes fabricated with metal oxides AgOx/IGZO;Microelectronic Engineering;2020-02

4. Asymmetric Double‐Gate β‐Ga 2 O 3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices;Advanced Electronic Materials;2019-04-02

5. Observation and characterization of memristive silver filaments in amorphous zinc-tin-oxide;MRS Communications;2018-08-13

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