Wet etching of Ge2Sb2Te5films and switching properties of resultant phase change memory cells-Reference-Cited by-同舟云学术

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Wet etching of Ge2Sb2Te5films and switching properties of resultant phase change memory cells

Published:2005-09-26 Issue:11 Volume:20 Page:1111-1115
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Cheng Huai-Yu,Jong Chao An,Chung Ren-Jei,Chin Tsung-Shune,Huang Rong-Tan

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Nonvolatile Memory Based on Phase Change in Se–Sb–Te Glass

2. Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy

3. Patterning of AlN, InN, and GaN in KOH‐based solutions

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3. Ga doping induced thermal stabilization of fcc phase in Ge2Sb2Te5 thin films: A step toward power-efficient phase change memories;Journal of Applied Physics;2023-10-02

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