Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1402966
Reference22 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. GaN MESFETs for high-power and high-temperature microwave applications
3. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
4. Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate
5. Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
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