Electron-beam-induced modification of GaAs oxide for in situ patterning of GaAs by Cl2gas etching
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=1/a=025/pdf
Reference11 articles.
1. Electron-Beam-Induced Cl2Etching of GaAs
2. Etching of GaAs for patterning by irradiation with an electron beam and Cl2 molecules
3. Fine Pattern Formation of Gallium Arsenide byIn SituElectron-Beam Lithography Using an Ultrathin Surface Oxide as a Resist
4. Novel electron‐beam lithography forinsitupatterning of GaAs using an oxidized surface thin layer as a resist
5. Submicron pattern etching of GaAs byin situelectron beam lithography using a pattern generator
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1. Effects of electron beam irradiation followed by thermal chlorine etching on InAs substrate;The European Physical Journal Applied Physics;1998-05
2. Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application;Japanese Journal of Applied Physics;1998-02-15
3. Selective epitaxy with in situ mask processing and pulse plasma;Advances in Colloid and Interface Science;1997-09
4. In situ pattern etching of GaAs by trimethylindium and H2O2gases with electron-beam-induced resist;Semiconductor Science and Technology;1995-01-01
5. Chlorine adsorption on electron beam irradiated GaAs photo-oxides: mechanism of in situ EB lithography;Applied Surface Science;1994-12
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