Submicron pattern etching of GaAs byin situelectron beam lithography using a pattern generator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103551
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4. Characterization of subsurface damage in GaAs processed by Ga+focused ion‐beam‐assisted Cl2etching using photoluminescence
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1. In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist;Applied Physics Letters;1999-03-29
2. Selective area chemical vapor deposition of titanium oxide films: Characterization of Ti(OC[sub 3]H[sub 7])[sub 4] as an electron beam resist;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
3. Selective epitaxy with in situ mask processing and pulse plasma;Advances in Colloid and Interface Science;1997-09
4. Nanofabrication by FIB;Microelectronic Engineering;1996-09
5. Nanobeam process system: An ultrahigh vacuum electron beam lithography system with 3 nm probe size;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11
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