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A new method for determination of parasitic capacitances for PHEMTs

  • Published:2005-04-27 Issue:6 Volume:20 Page:586-591
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Gao Jianjun,Li Xiuping,Wang Hong,Boeck Georg

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure;Active and Passive Electronic Components;2023-11-21

2. GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications;physica status solidi (a);2022-11-17

3. A distributed small signal equivalent circuit modeling method for InP HEMT;J INFRARED MILLIM W;2022

4. Comparison experiment of Parasitic Inductance Extraction of power module based on ANSYS Q3D software;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

5. A fast small signal modeling method for GaN HEMTs;Solid-State Electronics;2021-01
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