Comparison experiment of Parasitic Inductance Extraction of power module based on ANSYS Q3D software-Reference-Cited by-同舟云学术

Comparison experiment of Parasitic Inductance Extraction of power module based on ANSYS Q3D software

Published:2021-12-06 Issue: Volume: Page:
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Container-title:2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)
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Author:

Zhang Kailin,Cai Miao,Yun Minghui,Song Lei,Yang Daoguo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9675142/9675144/09675224.pdf?arnumber=9675224

Reference10 articles.

1. Parasitic Extraction Procedures for SiC Power Modules;10th Int Conf Integr Power Electron Syst (CIPS 2018),2018

2. Extracting parasitic inductances of IGBT power modules with two-port S-parameter measurement;tianjiao;IEEE Transportation Electrification Conference and Expo,0

3. Extraction of parasitics within wire-bond IGBT modules

4. High Performance Silicon Carbide Power Packaging - Past Trends;sean;Present Practices and Future Directions Energies,2017

5. Modeling and Analysis of SiC MOSFET Switching Oscillations;liu;IEEE Journal of Emerging and Selected Topics in Power Electronics,2017

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1. Stray Parameter Extraction Method Based on High- Frequency Oscillation: An Experimental Study With Theoretical and Execution Demo;IEEE Transactions on Power Electronics;2023-12

2. Analytical Estimation of Parasitic Ringing Overvoltage in Fast Switching Half-Bridges;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04