Analytical Estimation of Parasitic Ringing Overvoltage in Fast Switching Half-Bridges
Author:
Affiliation:
1. Electronics & Drives, Reutlingen University,Reutlingen,Germany,72768
Funder
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264309.pdf?arnumber=10264309
Reference17 articles.
1. Analysis and Design of an RC Snubber Circuit to Suppress False Triggering Oscillation for GaN Devices in Half-Bridge Circuits
2. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices
3. Evaluation of Switching Loss Contributed by Parasitic Ringing for Fast Switching Wide Band-Gap Devices
4. Research of Power Loop Layout and Parasitic Inductance in GaN Transistor Implementation
5. An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization
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