High-pressure investigation of an (InAl)As-(InGa)As resonant tunnelling double-barrier structure-Reference-Cited by-同舟云学术

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High-pressure investigation of an (InAl)As-(InGa)As resonant tunnelling double-barrier structure

Published:1991-06-01 Issue:6 Volume:6 Page:449-453
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Cury Luiz A,Dmowski L,Celeste A,Portal J C,Sivco D L,Cho A Y,Foster T J,Eaves L,Davies M,Heath M,Middleton J R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=6/a=006/pdf

Reference15 articles.

1. The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)As

2. Tunneling between two-dimensional electron gases

3. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP

4. Interband magnetoabsorption of In_{0.53}Ga_{0.47}As

5. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunneling under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures;High Pressure in Semiconductor Physics II;1998

2. Hydrostatic pressure studies of thin-barrier resonant tunnelling diodes;Semiconductor Science and Technology;1993-07-01

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