InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth-Reference-Cited by-同舟云学术

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InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth

Published:2003-04-10 Issue:6 Volume:18 Page:417-422
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Putyato M A,Bolkhovityanov Yu B,Chikichev S I,Feklin D F,Gilinsky A M,Gutakovskii A K,Preobrazhenskii V V,Revenko M A,Semyagin B R,Chtcherbatchev K D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. GSMBE grown In0.49Ga0.51P/(In)GaAs/GaAs high hole mobility transistor structures

2. Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus

3. Evaluation of the performance and operating characteristics of a solid phosphorus source valved cracking cell for molecular beam epitaxy growth of III–V compounds

4. Molecular-beam epitaxial growth of GaxIn1−xP–GaAs (x∼0.5) double heterojunction laser diodes using solid phosphorus and arsenic valved cracking cells

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply;Journal of Applied Physics;2023-11-15

2. Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source;Japanese Journal of Applied Physics;2023-05-04

3. Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE;Journal of Crystal Growth;2022-06

4. Single Photon Detectors Based on InP/InGaAs/InP Avalanche Photodiodes;Optoelectronics, Instrumentation and Data Processing;2021-09

5. Molecular beam epitaxy of III-P x As1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element;Semiconductors;2015-02

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