Fabrication and optical properties of GaAs quantum wires and dots by MOCVD selective growth-Reference-Cited by-同舟云学术

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Fabrication and optical properties of GaAs quantum wires and dots by MOCVD selective growth

Published:1993-06-02 Issue:6 Volume:8 Page:1082-1088
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Arakawa Y,Nagamune Y,Nishioka M,Tsukamoto S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=6/a=015/pdf

Reference17 articles.

1. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures

2. Multidimensional quantum well laser and temperature dependence of its threshold current

3. Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition

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1. III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth;Journal of Vacuum Science & Technology B;2023-10-31

2. Tunneling influence on the intersubband optical absorption coefficient and refraction index in biased GaAs/AlGaAs quantum well wires;Physica E: Low-dimensional Systems and Nanostructures;2021-08

3. Exciton states in conical quantum dots under applied electric and magnetic fields;Optics & Laser Technology;2021-07

4. Donor impurity related optical and electronic properties of cylindrical GaAs-AlxGa1−x As quantum dots under tilted electric and magnetic fields;Scientific Reports;2020-06-08

5. Effects of impurity and cross-sectional shape on entropy of quantum wires;Journal of Computational Electronics;2018-02-03

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