Tunneling influence on the intersubband optical absorption coefficient and refraction index in biased GaAs/AlGaAs quantum well wires-Reference-Cited by-同舟云学术

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Tunneling influence on the intersubband optical absorption coefficient and refraction index in biased GaAs/AlGaAs quantum well wires

Published:2021-08 Issue: Volume:132 Page:114763
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Aqiqi S.,Duque C.A.,Radu A.,Vinasco J.A.,Laroze D.

Funder

Universidad de Tarapacá

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference60 articles.

1. Handbook of Semiconductor Nanostructures and Nanodevices;Balandin,2006

2. Semiconductor Nanostructures: Quantum States and Electronic Transport;Ihn,2010

3. Nanostructured Semiconductors;Granitzer,2014

4. The Physics of Semiconductors;Grundmann,2016

5. Advances in Semiconductor Nanostructures;Latyshev,2017

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3. The influence of the electric and magnetic fields on donor impurity electronic states and optical absorption coefficients in a core/shell GaAs/Al$$_{0.33}$$Ga$$_{0.67}$$As ellipsoidal quantum dot;The European Physical Journal Plus;2023-08-31

4. The impact of hydrostatic pressure and temperature on the binding energy, linear, third-order nonlinear, and total optical absorption coefficients and refractive index changes of a hydrogenic donor impurity confined in GaAs/AlxGa1−xAs double quantum dots;The European Physical Journal Plus;2022-07

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