Photomodulation study of partially strained InxGa1-xAs layers-Reference-Cited by-同舟云学术

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Photomodulation study of partially strained InxGa1-xAs layers

Published:1993-07-01 Issue:7 Volume:8 Page:1420-1425
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chen J H,Chi W S,Huang Y S,Yin Y,Pollak F H,Pettit G D,Woodall J M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=7/a=036/pdf

Reference25 articles.

1. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs

2. Defects in epitaxial multilayers I. Misfit dislocations

3. Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons

4. Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells

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1. Dependence of Crystal‐Field Energy on Strain/Stress Sensed by Temperature Variation of Chalcopyrite Semiconductor (Optical) Band‐Gap for Efficient Band‐Gap Tuning in the CIS/CIGS Photovoltaic;physica status solidi (b);2024-08-07

2. Application of optical spectroscopic techniques in the characterization of elastic strain effects in semiconductor heterostructures and nanostructures and in semiconductor-based thin-film solar cells;physica status solidi (b);2014-05-26

3. Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs;Applied Physics Letters;2012-08-27

4. Optical modulation techniques applied in the analysis of chalcopyrite semiconductor heterostructures;Journal of Physics D: Applied Physics;2012-05-10

5. Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe;Japanese Journal of Applied Physics;2004-02-10

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