Influence of thermal treatments on the electronic activity of dislocations in GaAs observed by cathodoluminescence-Reference-Cited by-同舟云学术

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Influence of thermal treatments on the electronic activity of dislocations in GaAs observed by cathodoluminescence

Published:1990-12-01 Issue:12 Volume:5 Page:1221-1224
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Djemel A,Castaing J,Visentin N,Bonnet M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=12/a=013/pdf

Reference12 articles.

1. Leakage CurrentILVariation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs

2. Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method

3. Effects of dislocations on threshold voltage of GaAs field‐effect transistors

4. Dislocation multiplication in GaAs : inhibition by doping

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1. Materials science of defects in GaAs-based semiconductor lasers;Reliability of Semiconductor Lasers and Optoelectronic Devices;2021

2. Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering;Journal of Applied Physics;2019-04-28

3. Recombination activity of threading dislocations in GaInP influenced by growth temperature;Journal of Applied Physics;2018-04-28

4. Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison;physica status solidi (a);2002-05

5. Study of surface defects in GaAs by cathodoluminescence: calculation and experiment;Journal of Physics: Condensed Matter;2000-11-21

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