Study of surface defects in GaAs by cathodoluminescence: calculation and experiment-Reference-Cited by-同舟云学术

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Study of surface defects in GaAs by cathodoluminescence: calculation and experiment

Published:2000-11-21 Issue:49 Volume:12 Page:10343-10347
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Djemel A,Nouiri A,Tarento R-J

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Measurement of Diffusion Lengths in Direct‐Gap Semiconductors by Electron‐Beam Excitation

2. Measurement of Diffusion Lengths in p‐Type Gallium Arsenide by Electron Beam Excitation

3. Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductor parameters

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence;Spectroscopic Analysis of Optoelectronic Semiconductors;2016

2. Cathodoluminescence of Self-assembled Nanosystems;Characterization of Semiconductor Heterostructures and Nanostructures;2013

3. Temperature dependence of luminescent centre in cathodoluminescence;Physics Procedia;2009-11

4. Cathodoluminescence investigations of GaAs thin layers;Physics Procedia;2009-11

5. Cathodoluminescence study of undoped GaN films: Experiment and calculation;Physica E: Low-dimensional Systems and Nanostructures;2009-01

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