Observation of resonant Raman lines during the photoluminescence of doped GaN-Reference-Cited by-同舟云学术

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Observation of resonant Raman lines during the photoluminescence of doped GaN

Published:1997-01-01 Issue:1 Volume:12 Page:55-58
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Dewsnip D J,Andrianov A V,Harrison I,Lacklison D E,Orton J W,Morgan J,Ren G B,Cheng T S,Hooper S E,Foxon C T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. GaN, AlN, and InN: A review

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Free and bound excitons in thin wurtzite GaN layers on sapphire

4. Resonant Raman scattering in hexagonal GaN

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1. Optical characterization of magnesium incorporation in p-GaN layers for core–shell nanorod light-emitting diodes;Journal of Physics D: Applied Physics;2018-03-20

2. Formation of nanograting in fused silica by temporally delayed femtosecond double-pulse irradiation;Journal of Physics D: Applied Physics;2018-03-20

3. Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition;Journal of Crystal Growth;2011-08

4. Ammonothermal synthesis of GaN doped with transition metal ions (Mn, Fe, Cr);Journal of Alloys and Compounds;2008-05

5. Engineering aspects and applications of the new Raman instrumentation;IEE Proceedings - Science, Measurement and Technology;2005-11-01

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