Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4-Reference-Cited by-同舟云学术

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Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4

Published:1992-09-01 Issue:9 Volume:7 Page:1189-1198
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Cheung R,Thoms S,Watt M,Foad M A,Sotomayor-Torres C M,Wilkinson C D W,Cox U J,Cowley R A,Dunscombe C,Williams R H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=9/a=008/pdf

Reference47 articles.

1. Reactive‐ion etching of GaAs and InP using CCl2F2/Ar/O2

2. Reactive ion etching of GaAs in CCl4/H2and CCl4/O2

3. Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and He

4. Comparison of damage in the dry etching of GaAs by conventional reactive ion etching and by reactive ion etching with an electron cyclotron resonance generated plasma

5. Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET's

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1. Determination of absorption coefficients in AlInP lattice matched to GaAs;Journal of Physics D: Applied Physics;2015-09-11

2. Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study;Materials Science Forum;2012-07

3. Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching;Journal of Electronic Materials;2010-03-26

4. Issues in Etching Compound and Si-based Devices;Japanese Journal of Applied Physics;2002-06-30

5. Damage in III-V Semiconductors from very Low-Energy Process Plasmas;Defect and Diffusion Forum;2000-08

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