Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy-Reference-Cited by-同舟云学术

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Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy

Published:2016-01-26 Issue:3 Volume:31 Page:035004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ciura L,Kolek A,Kębłowski A,Stanaszek D,Piotrowski A,Gawron W,Piotrowski J

Funder

The National Science Centre

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=3/a=035004/pdf

Reference36 articles.

1. Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

2. Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy

3. Low frequency noise versus temperature spectroscopy of recently designed Ge JFETs

4. Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements

5. Low frequency noise and DLTS as semiconductor device characterization tools

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1. Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors;Journal of Electronic Materials;2024-07-03

2. New insight into defect energy levels in HgCdTe;Infrared Physics & Technology;2024-03

3. Rule-22: An Update to Rule-07;Journal of Electronic Materials;2023-09-22

4. The method for extracting defect levels in the MCT multilayer low-bandgap heterostructures;Opto-Electronics Review;2023-02-18

5. Research progress on p-type doping mechanism and low frequency noise of long wave HgCdTe devices;SCIENTIA SINICA Physica, Mechanica & Astronomica;2021-01-13

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