Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AIN quantum wells
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys
2. Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells
3. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
4. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
5. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
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1. Enhanced optical gain characteristics of InAlN/δ-GaN/InAlN nanoscale-heterostructure for D-UV applications;Superlattices and Microstructures;2020-04
2. Effects of a delta-layer insertion on the ultraviolet light emission characteristics of III-nitride quantum well structures;Superlattices and Microstructures;2017-12
3. Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices;IEEE Photonics Technology Letters;2016-10-15
4. Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures;Applied Physics Express;2016-01-06
5. Effects of AlGaN delta-layer insertion on light emission characteristics of ultraviolet AlGaN/AlN quantum well structures;physica status solidi (b);2015-03-23
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