High-performance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel-Reference-Cited by-同舟云学术

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High-performance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel

Published:2013-09-18 Issue:11 Volume:28 Page:115003
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhang Meng,Zhou Wei,Chen Rongsheng,Wong Man,Kwok Hoi-Sing

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=11/a=115003/pdf

Reference14 articles.

1. Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

2. High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

3. High-κ gate dielectrics: Current status and materials properties considerations

4. High-performance poly-silicon TFTs using HfO/sub 2/ gate dielectric

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1. Off-State Characteristics of Polycrystalline Silicon Thin-Film Transistors under Self-Heating Stress;2022 10th International Symposium on Next-Generation Electronics (ISNE);2023-05-12

2. Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors;IEEE Transactions on Electron Devices;2022-04

3. P‐6.6: Effects of lightly Doped Drain Structure in n‐channel ELA Bridged‐Grain Poly‐Si TFTs;SID Symposium Digest of Technical Papers;2019-09

4. Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets;Semiconductor Science and Technology;2019-05-21

5. Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress;Chinese Journal of Liquid Crystals and Displays;2017

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