Misfit dislocations in nanowire heterostructures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference75 articles.
1. Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures
2. Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases
3. Epitaxial necking in GaAs grown on pre-pattemed Si substrates
4. Growth morphology evolution and dislocation introduction in the heteroepitaxial system
5. X-ray scattering from dislocation arrays in GaSb
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