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Ultra-low resistive GaSb/InAs tunnel junctions

  • Published:2011-04-15 Issue:7 Volume:26 Page:075021
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Vizbaras Kristijonas,Törpe Marcel,Arafin Shamsul,Amann Markus-Christian

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12

2. Interband mid-infrared lasers;Mid-infrared Optoelectronics;2020

3. Design of thermophotovoltaics for tolerance of parasitic absorption;Optics Express;2019-10-17

4. p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region;Advanced Optical Materials;2018-10-23

5. A Self-Aligned Gate-Last Process Applied to All-III–V CMOS on Si;IEEE Electron Device Letters;2018-07
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