p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region-Reference-Cited by-同舟云学术

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

Published:2018-10-23 Issue:24 Volume:6 Page:1800972
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Pfenning Andreas¹^ORCID,Hartmann Fabian¹^ORCID,Weih Robert¹,Emmerling Monika¹,Worschech Lukas¹^ORCID,Höfling Sven¹²

Affiliation:

1. Technische PhysikPhysikalisches Institut and Röntgen Center for Complex Material Systems (RCCM)Universität Würzburg Am Hubland D‐97074 Würzburg Germany

2. SUPASchool of Physics and AstronomyUniversity of St. Andrews St. Andrews KY16 9SS UK

Funder

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201800972

Reference64 articles.

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5. Transition from sub-Poissonian to super-Poissonian shot noise in resonant quantum wells

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